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savantic semiconductor product specification silicon npn power transistors BU911 d escription with to-220c package darlington applications solenoid and relay drivers motor control electronic automotive ignition pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 450 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 6 a i cm collector current (peak) 10 a i b base current 1 a p tot total power dissipation t c =25 60 w t j max.operating junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 2.08 /w
savantic semiconductor product specification 2 silicon npn power transistors BU911 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a ;i b =0;l=10mh 400 v v cesat-1 collector-emitter saturation voltage i c =2.5a ;i b =50ma 1.8 v v cesat-2 collector-emitter saturation voltage i c =4a ;i b =200ma 1.8 v v besat-1 base-emitter saturation voltage i c =2.5a ;i b =50ma 2.2 v v besat-2 base-emitter saturation voltage i c =4a ;i b =200ma 2.5 v i ces collector cut-off current v ce =450v ; v be =0; t c =125 1.0 5.0 ma i ceo collector cut-off current v ce =400v ; i b =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 5 ma h fe dc current gain i c =3a ; v ce =5v 500 v f diode forward voltage i f =4a 2.5 v
savantic semiconductor product specification 3 silicon npn power transistors BU911 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)

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